PART |
Description |
Maker |
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
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SST39LF160-70-4I-EK SST39VF160-70-4I-EK SST39VF160 |
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48 17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays 16兆位(x16)的多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 3V PROM, 55 ns, PDSO48 64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加
|
Silicon Storage Technology, Inc.
|
NB7L216MNEVB |
2.5 V / 3.3 V, 12Gb/s Multi Level Clock/Data Input to RSECL, High Gain Receiver/Buffer/Translator with Internal Termination
|
ON Semiconductor
|
CFY35 Q62702-F1394 CFY35-20 CFY35-23 Q62702-F1393 |
From old datasheet system GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) SCREWDRIVER, MULTI BLADE 7PCSCREWDRIVER, MULTI BLADE 7PC; Kit contents:7 Piece Set X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
http:// SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
TDA8580 |
Multi-purpose power amplifier
|
NXP Semiconductors
|
SST39SF020-70-4C-UH SST39SF020-90-4C-N SST39SF020- |
2 Megabit (256K x 8) Multi-Purpose Flash 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加
|
Silicon Storage Technology, Inc. Silicon Storage Technology Inc FLASH
|
CS201212-5R6K CS201212-4R7K CS201212-R15K CS201212 |
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 5600000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 4700000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 150000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 3300000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 820000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 680000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 180000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 68000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 33000000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫,600 W/700 W连续,分之为重点,高功率增益 6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN 6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp. NEC[NEC]
|
27C64-25E/P 27C64-25E/J 27C64-25E/TS 27C64-25E/SO |
330MHz, Gain of 1/Gain of 2 Closed-Loop Buffers Evaluation Kit for the MAX4159, MAX4259 High-Speed, Low-Distortion, Differential Line Receivers SOT23, Rail-to-Rail, Fixed-Gain, Gain Amps/Open-Loop Op Amps x8存储 x8 EPROM x8存储
|
Microchip Technology, Inc. TUSONIX, Inc.
|
6MV1 3MV1 3MV111 |
Multi-purpose Medical Filter for Power Line Noise Protection
|
Tyco Electronics
|
LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫,600 W连续,分之为重点,高功率增益 14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp. NEC, Corp. NEC[NEC]
|
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